PART |
Description |
Maker |
KM736V889 |
256Kx36 Synchronous SRAM(256Kx36位同步静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
KM736V887 |
256Kx36 Synchronous SRAM(256Kx36位同步静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K7B803625M K7B801825M |
256Kx36 & 512Kx18 Synchronous SRAM
|
SAMSUNG[Samsung semiconductor]
|
DSK7A803600B K7A803600B K7A801800B DS_K7A803600B |
256Kx36 & 512Kx18 Synchronous SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K7B801825B |
256Kx36 & 512Kx18-Bit Synchronous Burst SRAM
|
Samsung Electronic
|
K7A803600A-16 K7A801800A K7A801800A-10 K7A801800A- |
512Kx18-Bit Synchronous Burst SRAM Data Sheet 256Kx36Bit Synchronous Burst SRAM Data Sheet 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K7N801845B |
256Kx36 & 512Kx18 Pipelined NtRAM
|
Samsung semiconductor
|
K7N801801M |
256Kx36 & 512Kx18 Pipelined NtRAMData Sheet
|
Samsung Electronic
|
GVT7C1356A |
(GVT7xxxx) 256Kx36/512Kx18 Pipelined SRAM With Nobltm Architecture
|
Cypress Semiconductor
|
IS42SM81600E IS42SM16800E-6BLI IS42RM81600E-7TL IS |
128Mb Mobile Synchronous DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Integrated Silicon Solution, Inc INTEGRATED SILICON SOLUTION INC
|